note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0153a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / sdr100s__ __ __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level pin configuration (see table 1) __ = normal (cathode to stud) r = reverse (anode to stud) family/voltage 20 = 200v 30 = 300v 40 = 400v 50 = 500v sdr100s20 thru sdr100s50 100 amp standard recovery high power rectifier 200-500 volt 5 sec features : ? low reverse leakage current ? single chip construction ? piv to 500v ? hermetically sealed ? low thermal resistance ? higher voltage devices up to 1kv available* ? fast and ultra fast recovery versions available* ? for reverse polarity add suffix ?r? ? tx, txv, and s-level screening available 2 / *contact factory maximum ratings symbol value units peak repetitive reverse and dc blocking voltage sdr100s20 SDR100S30 sdr100s40 sdr100s50 v rrm v rwm v r 200 300 400 500 volts average rectified forward current (resistive load, 60 hz sine wave, t a = 25c) io 100 amps peak surge current (8.3 ms pulse, half sine wave, t a = 25c) i fsm 1000 amps operating & storage temperature t op & t stg -65 to +200 oc maximum total thermal resistance junction to case r ? jc 0.85 oc/w notes: 1/ for ordering informatio n, price, operating curves, and availability- contact factory. 2/ screening based on mil-prf-19500. screening flows available on request. do-5
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0153a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr100s20 thru sdr100s50 electrical characteristics symbol max typ units instantaneous forward voltage drop (t a = 25oc, 300s pulse) i f = 10adc i f = 25adc i f = 50adc i f = 75adc i f = 100adc v f1 v f2 v f3 v f4 v f5 990 1100 1200 1250 1325 850 900 950 990 1030 mv dc instantaneous forward voltage drop (t a = -55oc, 300s pulse) i f = 10adc i f = 25adc i f = 50adc i f = 75adc i f = 100adc v f6 v f7 v f8 v f9 v f10 - - 1290 - 1310 950 1000 1040 1080 1110 mv dc instantaneous forward voltage drop (t a = 100oc, 300s pulse) i f = 10adc i f = 25adc i f = 50adc i f = 75adc i f = 100adc v f11 v f12 v f13 v f14 v f15 - - - - - 750 815 875 930 975 mv dc instantaneous forward voltage drop (t a = 125oc, 300s pulse) i f = 10adc i f = 25adc i f = 50adc i f = 75adc i f = 100adc v f16 v f17 v f18 v f19 v f20 - - 1100 - 1250 720 780 850 900 950 mv dc instantaneous forward voltage drop (t a = 150oc, 300s pulse) i f = 10adc i f = 25adc i f = 50adc i f = 75adc i f = 100adc v f21 v f22 v f23 v f24 v f25 - - - - - 680 750 810 870 920 mv dc reverse leakage current (rated v r , t a = 25oc, 300s pulse minimum) i r1 10 0.1 a reverse leakage current (rated v r , t a = 100oc, 300s pulse minimum) i r2 - 10 a reverse leakage current (rated v r , t a = 125oc, 300s pulse minimum) i r3 1000 25 a reverse leakage current (rated v r , t a = 150oc, 300s pulse minimum) i r4 - 75 a reverse recovery time (i f = 500ma, i r = 1 amp, i rr = 250ma, t a = 25oc) t rr 3 5 sec junction capacitance (t a = 25oc, f = 1mhz) v r = 5v dc v r = 10v dc c j - 450 420 330 pf table 1- pin assignment code configuration terminal stud __ normal anode cathode r reverse cathode anode
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0153a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr100s20 thru sdr100s50 do-5 outline (normal pi n configuration shown):
|
